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| SI2318DS New Product Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES D TrenchFETr Power MOSFET ID (A) 3.9 3.5 rDS(on) (W) 0.045 @ VGS = 10 V 0.058 @ VGS = 4.5 V APPLICATIONS D Stepper Motors D Load Switch TO-236 (SOT-23) G 1 3 D Ordering Information: SI2318DS-T1 (with Tape and Reel) S 2 Top View SI2318DS( C8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a, b Power Dissipationa, b Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 sec 40 "20 3.9 3.1 16 0.8 1.25 0.8 Steady State Unit V 3.0 2.4 A 0.75 0.48 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. b. Pulse width limited by maximum junction temperature t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 Unit _C/W C/W Document Number: 72322 S-31731--Rev. A, 18-Aug-03 www.vishay.com 1 SI2318DS Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistance Drain Source On Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 32 V, VGS = 0 V VDS = 32 V, VGS = 0 V, TJ = 55_C VDS w 4.5 V, VGS = 10 V VGS = 10 V, ID = 3.9 A VGS = 4.5 V, ID = 3.5 A VDS = 10 V, ID = 3.9 A IS = 1.25 A, VGS = 0 V 6 0.036 0.045 11 0.8 1.2 0.045 0.058 40 1 3 "100 0.5 10 V nA mA A W S V Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Rg Ciss Coss Crss VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 3.9 A 10 1.6 2.1 1.8 540 80 45 p pF W 15 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time td(on) tr td(off) tf VDD = 20 V, RL = 20 W ID ^ 1.0 A, VGEN = 10 V, RG = 6 W 5 12 20 15 10 20 30 25 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 5 V 16 I D - Drain Current (A) 4V I D - Drain Current (A) 16 20 Transfer Characteristics 12 12 8 8 TC = 125_C 4 25_C 0 0.0 - 55_C 2.5 3.0 3.5 4.0 4.5 4 1, 2 V 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Document Number: 72322 S-31731--Rev. A, 18-Aug-03 www.vishay.com 2 SI2318DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.08 Vishay Siliconix On-Resistance vs. Drain Current 800 Capacitance r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.06 VGS = 4.5 V VGS = 10 V 600 Ciss 0.04 400 0.02 200 Coss Crss 0.00 0 4 8 12 16 20 0 0 8 16 24 32 40 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 20 V ID = 3.9 A 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.9 A 8 r DS(on) - On-Resistance (W) (Normalized) 4 6 8 10 12 1.7 6 1.4 4 1.1 2 0.8 0 0 2 Qg - Total Gate Charge (nC) 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.20 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C r DS(on) - On-Resistance ( W ) 0.16 ID = 3.9 A 0.12 1 TJ = 25_C 0.08 0.04 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72322 S-31731--Rev. A, 18-Aug-03 www.vishay.com 3 SI2318DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA Power (W) - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 2 6 TA = 25_C 10 Single Pulse Power 8 4 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100.0 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10.0 I D - Drain Current (A) 10 ms 100 ms 1.0 1 ms 10 ms 0.1 TA = 25_C Single Pulse 0.01 0.1 1 10 100 ms dc, 100 s, 10 s, 1 s 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 166_C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72322 S-31731--Rev. A, 18-Aug-03 |
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